Semiconductor device including fin structure with two channel layers and manufacturing method thereof

ABSTRACT

A semiconductor device includes a fin structure protruding from a substrate and having a top face and a first side face and a second side face opposite to the first side face, and first semiconductor layers disposed over the first and second side faces of the fin structure. A thickness in a vertical direction of the first semiconductor layers is smaller than a height of the fin structure.

TECHNICAL FIELD

The disclosure relates to a semiconductor integrated circuit, moreparticularly to a semiconductor device having a fin structure and itsmanufacturing process.

BACKGROUND

As the semiconductor industry has progressed into nanometer technologyprocess nodes in pursuit of higher device density, higher performance,and lower costs, challenges from both fabrication and design issues haveresulted in the development of three-dimensional designs, such as a finfield effect transistor (Fin FET). Fin FET devices typically includesemiconductor fins with high aspect ratios and in which channel andsource/drain regions of semiconductor transistor devices are formed. Agate is formed over and along the sides of the fin devices (e.g.,wrapping) utilizing the advantage of the increased surface area of thechannel and source/drain regions to produce faster, more reliable andbetter-controlled semiconductor transistor devices. In addition,strained materials in source/drain (S/D) portions of the Fin FETutilizing selectively grown silicon germanium (SiGe) may be used toenhance carrier mobility. For example, compressive stress applied to achannel of a PMOS device advantageously enhances hole mobility in thechannel. Similarly, tensile stress applied to a channel of an NMOSdevice advantageously enhances electron mobility in the channel.

However, there are challenges to implementation of such features andprocesses in complementary metal-oxide-semiconductor (CMOS) fabrication.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 is an exemplary perspective view of a semiconductor FET devicehaving a fin structure (Fin FET) according to one embodiment of thepresent disclosure;

FIG. 2 is an exemplary plan view of the semiconductor device having afin structure;

FIG. 3 is an exemplary cross sectional view along the line X1-X1′ ofFIG. 2;

FIG. 4 is an exemplary cross sectional view along the line X2-X2′ ofFIG. 2;

FIG. 5 is an exemplary cross sectional view along the line Y-Y′ of FIG.2;

FIGS. 6-11 show is exemplary cross sectional views of channel layersaccording to some embodiments of the present disclosure;

FIGS. 12-29 show exemplary processes for manufacturing the Fin FETdevice according to one embodiment of the present disclosure;

FIGS. 30 and 31 show exemplary processes for manufacturing the Fin FETdevice according to another embodiment of the present disclosure;

FIGS. 32-35 show exemplary processes for manufacturing the Fin FETdevice according to yet another embodiment of the present disclosure;and

FIGS. 36-39 show exemplary processes for manufacturing the Fin FETdevice according to another embodiment of the present disclosure.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the invention. Specific embodiments or examples of components andarrangements are described below to simplify the present disclosure.These are, of course, merely examples and are not intended to belimiting. For example, dimensions of elements are not limited to thedisclosed range or values, but may depend upon process conditions and/ordesired properties of the device. Moreover, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed interposing the first and second features, suchthat the first and second features may not be in direct contact. Variousfeatures may be arbitrarily drawn in different scales for simplicity andclarity.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. In addition, the term“made of” may mean either “comprising” or “consisting of.”

FIG. 1 shows an exemplary perspective view of the Fin FET deviceaccording to one embodiment of the present disclosure. FIG. 2 is anexemplary plan view of the Fin FET according to one embodiment of thepresent disclosure. In FIG. 2, only one fin structure is illustrated.FIG. 3 is an exemplary cross sectional view along the line X1-X1′ ofFIG. 2, FIG. 4 is an exemplary cross sectional view along the lineX2-X2′ of FIG. 2, and FIG. 5 is an exemplary cross sectional view alongthe line Y-Y′ of FIG. 2. In these figures, some layers/features areomitted for simplification.

The Fin FET device 1 includes, among other features, a substrate 10, afin structure 20, channel layers 30, a gate dielectric 80 (shown in FIG.5) and a gate electrode 40. In this embodiment, the substrate 10 is asilicon substrate. Alternatively, the substrate 10 may comprise anotherelementary semiconductor, such as germanium; a compound semiconductorincluding IV-IV compound semiconductors such as SiC and SiGe, III-Vcompound semiconductors such as GaAs, GaP, GaN, InP, InAs, InSb, GaAsP,AlGaN, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinationsthereof. In one embodiment, the substrate 10 is a silicon layer of anSOI (silicon-on insulator) substrate. When an SOI substrate is used, thefin structure may protrude from the silicon layer of the SOI substrateor may protrude from the insulator layer of the SOI substrate. In thelatter case, the silicon layer of the SOI substrate is used to form thefin structure. Amorphous substrates such as amorphous Si or amorphousSiC, or insulating material such as silicon oxide may also be used asthe substrate 10. The substrate 10 may include various regions that havebeen suitably doped with impurities (e.g., p-type or n-typeconductivity).

The fin structure 20 is disposed over the substrate. The fin structure20 may be made of the same material as the substrate 10 and maycontinuously extend from the substrate 10. In this embodiment, the finstructure is made of Si. The silicon layer of the fin structure 20 maybe intrinsic, or doped with an n-type impurity or a p-type impurity. Inthis embodiment, the silicon layer of the fin structure is intrinsic.

In FIG. 1, three fin structures 20 are disposed over the substrate 10.However, the number of the fin structures is not limited to three. Thenumbers may be one, two or four or more. In addition, one of more dummyfin structures may be disposed at both sides of the fin structures 20 toimprove pattern fidelity in patterning processes. The width of the finstructure 20 is in a range of about 5 nm to about 40 nm in someembodiments. The height of the fin structure 20 is in a range of about10 nm to about 50 nm in some embodiments, and may be in a range of about20 nm to 30 nm in other embodiments.

The lower part of the fin structure 20 is covered by a lower cover layer45. The lower cover layer 45 is disposed over side faces (side walls) ofthe fin structure 20 and also disposed over the substrate 10. In someembodiments, the lower cover layer 45 includes a first liner layer 50and a second liner layer 60 disposed over the first liner layer 50. Thefirst liner layer 50 may be a silicon oxide liner layer and the secondliner layer 60 may be a silicon nitride liner layer in some embodiments.The thickness of the first liner layer 50 is in a range of about 1 nm toabout 15 nm in some embodiments. The thickness of the second liner layer60 is in a range of about 1 nm to about 25 nm.

The upper part of the fin structure 20 is covered by an upper coverlayer 70. The upper cover layer 70 is disposed over the side faces ofthe fin structure and also disposed over the top surface of the finstructure 20. In this embodiment, the upper cover layer 70 includes asilicon nitride layer. In some embodiments, the upper cover layer may bemultiple layers including a first layer and a second layer disposed overthe first layer, where the first layer may be a silicon oxide layer andthe second layer may be a silicon nitride layer. The lower cover layer45 and the upper cover layer 70 are spaced apart from each other. Insome embodiments, the upper cover layer 70 is over the fin structurecovered by the gate electrode 40 and is not over the fin structure notcovered by the gate electrode 40, or the upper cover layer may not existover the fin structure 20. The thickness of the upper cover layer 70 isin a range of about 1 nm to about 15 nm.

Channel layers 30 are disposed over both side faces of the fin structure20 in the space between the lower cover layer 45 and the upper coverlayer 70. The height T1 (vertical length, see. FIG. 5) of the channellayer 30 is smaller than a height of the fin structure 20. The channellayer 30 includes a Ge layer in some embodiments. In other embodiments,the channel layer 30 may include a stacked layer of, in the order closerto the side face of the fin structure, Ge, Si, Si/Ge,Si/Si_((1-x))Ge_(x)/Ge, Si/Si_((1-x))Ge_(x) or Si_((1-x))Ge_(x)/Ge,where x may be about 0.15 or more and less than 1 in some embodiments.The channel layer 30 may be made by epitaxial silicon formed on siliconfin structure in certain embodiments. The thickness W1 (horizontallength, see. FIG. 5) of the channel layer 30 is in a range of about 5 nmto about 30 nm in some embodiments. The height T1 of the channel layer30 is in a range of about 5 nm to about 120 nm in some embodiments.

Since two channel layers 30 are disposed per one fin structure, thenumber of channels is double compared with a case where one channel isformed on one fin structure.

As shown in FIG. 5, a gate electrode 40 is disposed over the finstructure so as to cover the channel layers 30. A gate dielectric layer80 is interposed between the gate electrode 40 and the channel layer 30.The gate dielectric layer 80 is also disposed over the upper cover layer70. The gate electrode 40, the gate dielectric layer 80 and the channellayers 30 constitute two MOS FETs. The two MOS FETs may be the same type(p/n) or different types, and the two channel layers 30 may beelectrically coupled with each other. Part of the channel layer 35 notcovered by the gate electrode 40 functions as a source and/or drain ofthe MOS FETs.

In certain embodiments, the gate dielectric layer 80 includes adielectric material, such as silicon oxide, silicon nitride, or high-kdielectric material, other suitable dielectric material, and/orcombinations thereof. Examples of high-k dielectric material includeHfO₂, HfSiO, HfSiON, HfTaO, HfTiO, HfZrO, zirconium oxide, aluminumoxide, titanium oxide, hafnium dioxide-alumina (HfO₂—Al₂O₃) alloy, othersuitable high-k dielectric materials, and/or combinations thereof.

The gate electrode 40 includes any suitable material, such aspolysilicon, aluminum, copper, titanium, tantalum, tungsten, cobalt,molybdenum, tantalum nitride, nickel silicide, cobalt silicide, TiN, WN,TiAl, TiAlN, TaCN, TaC, TaSiN, metal alloys, other suitable materials,and/or combinations thereof. The gate structure may be formed using agate-last or replacement gate methodology.

In certain embodiments of the present disclosure, work functionadjustment layers (not shown) may be interposed between the gatedielectric layer 80 and the gate electrode 40. The work functionadjustment layer may include a single layer or alternatively amulti-layer structure, such as various combinations of a metal layerwith a selected work function to enhance the device performance (workfunction metal layer), liner layer, wetting layer, adhesion layer, metalalloy or metal silicide. The work function adjustment layers are made ofa conductive material such as a single layer of Ti, Ag, Al, TiAlN, TaC,TaCN, TaSiN, Mn, Zr, TiN, TaN, Ru, Mo, Al, WN, Cu, W, Re, Ir, Co, Ni,other suitable metal materials, or a multilayer of two or more of thesematerials. In some embodiments, the work function adjustment layer mayinclude a first metal material for the n-channel Fin FET and a secondmetal material for the p-channel Fin FET. For example, the first metalmaterial for the n-channel Fin FET may include metals having a workfunction substantially aligned with a work function of the substrateconduction band, or at least substantially aligned with a work functionof the conduction band of the channel layer 30. Similarly, for example,the second metal material for the p-channel Fin PET may include metalshaving a work function substantially aligned with a work function of thesubstrate valence band, or at least substantially aligned with a workfunction of the valence band of the channel layer 30. In someembodiments, the work function adjustment layer may alternately includea polysilicon layer. The work function adjustment layer may be formed byALD, PVD, CVD, e-beam evaporation, or other suitable process. Further,the work function adjustment layer may be formed separately for then-channel Fin FET and the p-channel Fin FET which may use differentmetal layers.

Source and drain regions 35 are also formed in the Ge channel layer 30not covered by the gate electrode 40, by appropriately doping impuritiesin the source and drain regions 35. An alloy of Ge or Si and a metalsuch as Co, Ni, W, Ti or Ta may be formed on the source and drainregions 35.

Further, spaces between the fin structures and/or a space between onefin structure and another element formed over the substrate 10 arefilled by shallow-trench-isolation (STI) oxide including an insulatingmaterial. The insulating material for the STI may include silicon oxide,silicon nitride, silicon oxynitride (SiON), SiOCN, fluoride-dopedsilicate glass (FSG), or a low-K dielectric material.

The structure of the channel layer 30 is not limited to the structureshown in FIG. 1 or 5. FIGS. 6-11 show exemplary cross sectional views ofchannel layers according to other embodiments of the present disclosure.In FIGS. 6-11, some features, for example, the first liner layer 50, thesecond liner layer 60, upper cover layer 70 and gate dielectric layer80, are not shown for simplicity.

In certain embodiments, as shown in FIG. 6, the channel layer 30includes a Si layer 34 disposed over the side face of the fin structure20 and a Ge layer 32 disposed over the Si layer 34. The Si layer 34 isan epitaxial Si layer and the Ge layer 32 is also an epitaxial Ge layerin some embodiments.

In certain embodiments, as shown in FIG. 7, the channel layer 30includes a Si layer 34 disposed over the side face of the fin structure20, a Si_((1-x))Ge_(x) layer 36 disposed over the Si layer 34 and a Gelayer 32 disposed over the Si_((1-x))Ge_(x) layer 36. The Si layer 34 isan epitaxial Si layer, the Si_((1-x))Ge_(x) layer 36 is an epitaxialSi_((1-x))Ge_(x) layer, and the Ge layer 32 is also an epitaxial Gelayer in some embodiments. The value of x is in a range of about 0.15 ormore and less than 1.0 in some embodiments.

In some embodiments, the channel layer 30 may include, from the sideface of the fin structure, Si, Ge/Si, Si_((1-x))Ge_(x)/Si,Ge/Si_((1-x))Ge_(x)/Si or Si_((1-x))Ge_(x)/Ge/Si. The channel layer 30may be made by epitaxial silicon formed on silicon fin structure incertain embodiments.

As shown in FIG. 8, corners of the channel layer 30 may have a roundedshape in some embodiments. Further, as shown in FIG. 9, the end portionof the channel layer 30 may have a rounded shape. Similar to FIGS. 6 and7, the stacked layer of the Si layer 34 and the Ge layer 32 or thestacked layer of the Si layer 34, the Si_((1-x))Ge_(x) layer 36 and theGe layer 32 may be applicable to the channel layer having roundedcorners and/or rounded end portion. For example, as shown in FIG. 10,the channel layer 30 includes a Si layer 34 disposed over the side faceof the fin structure 20 and a Ge layer 32 disposed over the Si layer 34,and the corners of the Ge layer 32 are rounded. As shown in FIG. 11, thechannel layer 30 includes a Si layer 34 disposed over the side face ofthe fin structure 20, a Si_((1-x))Ge_(x) layer 36 disposed over the Silayer 34 and a Ge layer 32 disposed over the Si_((1-x))Ge_(x) layer 36,and the corners of the Ge layer 32 are rounded. The rounded cornersand/or end portion of the channel layer 30 may relax electric fieldconcentration at the corner of the channel layer.

FIGS. 12-29 show cross sectional views of exemplary sequential processesof the Fin FET device according to one embodiment. It is understood thatadditional operations can be provided before, during, and afterprocesses shown by FIGS. 12-29 and some of the operation described belowcan be replaced or eliminated, for additional embodiments of the method.The order of the operations/processes may be interchangeable.

As shown in FIG. 12, a mask layer 100 is formed over the substrate 10by, for example, a thermal oxidation process and/or a chemical vapordeposition (CVD) process. The substrate 10 is, for example, a siliconsubstrate. The mask layer 100 includes, for example, a pad oxide (e.g.,silicon oxide) layer 105 and a silicon nitride mask layer 110 in someembodiments. The thickness of the pad oxide layer 105 is in a range ofabout 2 nm to about 15 nm and the thickness of the silicon nitride masklayer 110 is in a range of about 2 nm to about 50 nm in someembodiments. A mask pattern 120 is further formed over the mask layer100. The mask pattern 120 is, for example, a photo resist pattern formedby photo lithography.

By using the mask pattern 120 as an etching mask, hard mask pattern ofthe pad oxide layer 105 and the silicon nitride mask layer 100 areformed. The width of the hard mask pattern is in a range of about 5 nmto about 40 nm in some embodiments. In certain embodiments, the width ofthe hard mask patterns is in a range of about 5 nm to about 30 nm.

As shown in FIG. 13, by using the hard mask pattern as an etching mask,the substrate 10 is pattered into fin structures 20 by trench etchingusing a dry etching method and/or a wet etching method. A height D1 ofthe fin structure 20 is in a range of about 30 nm to about 300 nm. Incertain embodiments, the height D1 is in a range of about 30 nm to about200 nm. When the heights of the fin structures are not uniform, theheight D1 from the substrate may be measured from the plane thatcorresponds to the average heights of the fin structures.

In this embodiment, a bulk silicon wafer is used as a starting materialand constitutes the substrate 10. However, in some embodiment, othertypes of substrate may be used as the substrate 10. For example, asilicon-on-insulator (SOI) wafer may be used as a starting material, andthe insulator layer of the SOI wafer constitutes the substrate 10 andthe silicon layer of the SOI wafer is used for the fin structure 20.

As shown in FIG. 14, a cover layer 45 is formed over the fin structure20 by, for example, a thermal oxidation process and/or a CVD process.The cover layer 45 includes, for example, an oxide (e.g., silicon oxide)cover layer 50 and a silicon nitride (SiN) cover layer 60 in someembodiments. The oxide cover layer 50 may be formed by, for example, athermal oxidation process on the side walls of the fin structures 20.Then, the SiN cover layer 60 may be formed by a CVD process. Other filmforming methods can be applied in forming the oxide cover layer 50and/or the SiN cover layer 60. The thickness of the oxide cover layer 50is in a range of about 1 nm to about 15 nm and the thickness of thesilicon nitride cover layer 60 is in a range of about 1 nm to about 25nm in some embodiments.

The SiN cover layer 60 may be deposited by physical vapor deposition(PVD) (sputtering), CVD, plasma-enhanced chemical vapor deposition(PECVD), atmospheric pressure chemical vapor deposition (APCVD),low-pressure CVD (LPCVD), high density plasma CVD (HDPCVD), atomic layerdeposition (ALD), and/or other processes. In a LPCVD process, a siliconsource such as Si₂H₆, SiH₄ and/or Si₂Cl₆ and a nitrogen source such asNH₃ and/or N₂ are used and the SiN film is formed at a temperature in arange of about 900-1200° C. under a reduced pressure in a range of about0.01 to 10 Torr (about 1.33 Pa to about 1333 Pa) in some embodiments. Ina plasma CVD process, the process temperature is in a range of 250-500°C.

As shown in FIG. 15, a sacrificial layer 130 is formed so that the finstructures are embedded in the sacrificial layer 130. The fin structures20 may be fully or partially embedded in the sacrificial layer 130. Inthis embodiment, the sacrificial layer is a photo resist layer. Thephoto resist layer is formed by spin coating. The photo resist layer maybe replaced with any organic resin (e.g., non-photosensitive resins)layer or inorganic layer. A material for a bottom anti-reflectioncoating may be used.

Then, as shown in FIG. 16, the thickness of the sacrificial layer 130 isreduced by, for example, an etch-back process so as to expose a part ofthe fin structures. The etch-back process of the photo resist may beperformed by using plasma including O₂ and at least one of CF₄ and CHF₃,at a temperature in a range about 0° C. to about 300° C. and at apressure in a range of about 1 to about 10 Torr (about 133 Pa to about1333 Pa) in certain embodiments. By adjusting etching time, a desiredthickness of the remaining photo resist layer can be obtained. Theremaining thickness T2 is adjusted to a range of about 10 nm to about150 nm in some embodiments.

Instead of etching-back the thick resist layer, it may be possible toform a thin sacrificial layer of the photo resist having the thicknessT2 directly by adjusting, for example, the spin coating condition.

Next, as shown in FIG. 17, part of the silicon nitride cover layer 60exposed from the sacrificial layer 130 is removed by plasma etching orwet etching.

The remaining sacrificial layer 130 is removed by, for example, anashing process and/or a wet cleaning process, as shown in FIG. 18.

As shown in FIG. 19, an isolation insulating layer 140 is formed. Thefin structures 20 may be fully or partially embedded in the isolationinsulating layer 140. The isolation insulating layer 140 is made of, forexample, silicon dioxide formed by LPCVD (low pressure chemical vapordeposition), plasma-CVD or flowable CVD. In the flowable CVD, flowabledielectric materials instead of silicon oxide are deposited. Flowabledielectric materials, as their name suggest, can “flow” duringdeposition to fill gaps or spaces with a high aspect ratio. Usually,various chemistries are added to silicon-containing precursors to allowthe deposited film to flow. In some embodiments, nitrogen hydride bondsare added. Examples of flowable dielectric precursors, particularlyflowable silicon oxide precursors, include a silicate, a siloxane, amethyl SilsesQuioxane (MSQ), a hydrogen SilsesQuioxane(HSQ), an MSQ/HSQ,a perhydrosilazane (TCPS), a perhydro-polysilazane (PSZ), a tetraethylorthosilicate (TEOS), or a silyl-amine, such as trisilylamine (TSA).These flowable silicon oxide materials are formed in amultiple-operation process. After the flowable film is deposited, it iscured and then annealed to remove un-desired element(s) to form siliconoxide. When the un-desired element(s) is removed, the flowable filmdensifies and shrinks. In some embodiments, multiple anneal processesare conducted. The flowable film is cured and annealed more than once attemperatures, such as in a range from about 1000° C. to about 1200° C.,and for an extended period, such as 30 hours or more in total. Theisolation insulating layer 140 may be formed by SOG. SiO, SiON, SiOCN orfluoride-doped silicate glass (FSG) may be used as the isolationinsulating layer in some embodiments. After forming the isolationinsulating layer 140, a thermal process, for example, an anneal process,may be performed to improve the quality of the isolation insulatinglayer.

As shown in FIG. 20, part of the isolation layer 140 is removed by, forexample, a chemical mechanical polishing (CMP) method or otherplanarization methods such as an etch-back process, so that the topsurface of the silicon nitride mask layer 110 is exposed. The topportions of the silicon nitride mask layer 110 may be slightly etched.

As shown in FIG. 21, the silicon nitride mask layer 110 is removed, bywet etching and/or dry etching process. The pad oxide layer 105 is alsoremoved.

As shown FIG. 22, a silicon nitride (SiN) layer 115 is formed. The SiNlayer 115 may be formed by a CVD process similar to the SiN cover layer60 as explained above. The thickness of the SiN layer 115 is in a rangeof about 2 nm to about 15 nm in some embodiments.

As shown in FIG. 23, a planarization operation is performed to removethe unnecessary portions of the SiN layer 115 and the isolation layer140 so that SiN layer 115 remains only on the top surface of the finstructure 20. The thickness of the remaining SiN layer 115 after theplanarization operation is in a range of about 2 nm to about 8 nm insome embodiments.

As shown in FIG. 24, the thickness of the isolation insulating layer 140is reduced by, for example, an etch-back process so as to expose a partof the fin structure 20. The etch-back process may be performed by usingdry etching or wet etching. By adjusting etching time, a desiredthickness of the remaining insulating layer 140 can be obtained. In thepresent disclosure, the thickness T3 is adjusted to be in a range ofabout 15 nm to about 270 nm in some embodiments. Here, T3 is aboutT1+T2. In this process, the silicon oxide layer 60 at the tope portionof the fin structure 20 is also removed.

As shown in FIG. 25, another silicon nitride (SiN) layer 117 is formed.The SiN layer 117 may be formed by a CVD process similar to the SiNcover layer 60 as explained above. The thickness of the SiN layer 117 isin a range of about 1 nm to about 15 nm in some embodiments.

As shown in FIG. 26, an etch-back process is performed to removeunnecessary portion of the SiN layer 117 so that an upper cover layer 70is formed over the upper portion of the fin structure 20. The thicknessof the resultant upper cover layer 70 is in a range of about 2 nm toabout 40 nm in some embodiments. The thickness of upper cover layer 70is not limited to this range and may depend upon the etching conditionor other process factors.

As shown in FIG. 27, the thickness of the remaining isolation insulatinglayer 140 is further reduced by, for example, an etch-back process so asto expose a center part 25 of the fin structure 20, which is not coveredby the SiN cover layer 60 and the upper cover layer 70. The etch-backprocess may be performed by using dry etching or wet etching. Byadjusting etching time, a desired thickness of the remaining isolationinsulating layer 140 can be obtained. In the present disclosure, thethickness T4 of the remaining isolation insulating layer 140 is adjustedto be in a range of about 10 nm to about 100 nm in some embodiments. T4is smaller than T2. In some embodiments, the isolation insulating layer140 may be fully removed. In this process, the silicon oxide layer 60 inthe center part 25 is also removed, and the lower cover layer 45 isobtained.

A shown in FIG. 28, channel layers 30 are formed over the exposedportion 25 of the fin structure 20. The channel layer 30 may be a Gelayer, a stacked layer of Si and Ge or a stacked layer of Si,Si_((1-x))Ge_(x) and Ge, or even a Si layer, as explained with respectto FIGS. 6-11.

When the channel layer 30 is made of Ge, the Ge layer is epitaxiallygrown on the exposed portion 25 by using, for example, GeH₄ and/or Ge₂H₆as source gas at a temperature in a range of about 300° C. to about 500°C. and at a pressure in a range of about 10 Torr to about 500 Torr.

The Si_((1-x))Ge_(x) layer may be epitaxially grown by using, forexample, SiH₂Cl₂ and/or SiH₄ and GeH₄ and/or Ge₂H₆ as source gas at atemperature in a range of about 500° C. to about 700° C. and at apressure in a range of about 10 Torr to about 100 Torr. The value of xmay be constant in the Si_((1-x))Ge_(x) layer or may increase in theSi_((1-x))Ge_(x) layer as being grown. The Si layer may also beepitaxially grown by using, for example, SiH₂Cl₂ and/or SiH₄ as sourcegas at a temperature in a range of about 600° C. to about 800° C. and ata pressure in a range of about 10 Torr to about 100 Torr. The channellayer 30 may appropriately be doped with, for example, boron and/orphosphorous in an amount of about 1×10¹⁹ to 5×10¹⁹ cm⁻³, in someembodiments.

As shown in FIG. 29, the gate structure is formed over the fin structure20 with the channel layers 30.

The gate dielectric layer 80 is formed by CVD, PVD, ALD e-beamevaporation, or other suitable process. When the gate dielectric layer80 is silicon oxide, SiH₄, Si₂H₆ and/or Si₂Cl₆ is used as a source gas.When the gate dielectric layer 80 is silicon nitride, SiH₄, Si₂H₆ and/orSi₂Cl₆ and NH₃ are used as source gases. When the gate dielectric layer80 is hafnium oxide, zirconium oxide, aluminum oxide or titanium oxide,metal hydride, metal chloride and/or organic metal including Hf, Zr, Alor Ti is used as a source gas.

The gate electrode 40 may be formed by a film forming process by usingALD, PVD, CVD, e-beam evaporation, electroplating or other suitableprocess, and a patterning process. Metal hydride, metal chloride and/ororganic metal including Ti, Ta, Co, Si, Zr, Al or W is used as a sourcegas. The gate structure may be formed using a gate-last or replacementgate methodology.

FIGS. 30 and 31 show cross sectional views of another exemplarysequential process of the Fin FET device according to one embodiment.

After the channel layers 30 are formed as shown in FIG. 28, a plasmatreatment is performed on the channel layer 30 so that the cornersand/or the end portion of the channel layer 30 are rounded as shown inFIG. 30. Then, as shown in FIG. 31, the gate structure is formed overthe fin structure 20 with the rounded channel layers 30.

FIGS. 32-35 show exemplary processes for manufacturing the Fin FETdevice according to yet another embodiment of the present disclosure.

After the process shown in FIG. 26, portion of the SiN cap layer 70disposed over the upper surface of the fin structure 20 is removed, byfor example, a CMP process so that the upper surface 27 of the finstructure 20 is exposed, as shown in FIG. 32.

Similar to FIG. 27, the thickness of the remaining isolation insulatinglayer 140 is further reduced by, for example, an etch-back process so asto expose a center part 25 of the fin structure 20, which is not coveredby the SiN cover layer 60 and the upper cover layer 72, as shown in FIG.33.

A shown in FIG. 34, channel layers 30 and a third channel layer 32 areformed over the exposed portion 25 and exposed upper surface 27 of thefin structure 20, similar to FIG. 28. The channel layers 30 and 32 maybe a Ge layer, a stacked layer of Si and Ge or a stacked layer of Si,Si_((1-x))Ge_(x) and Ge, as explained with respect to FIGS. 6-11. Thedimension Wc1 of the channel layers 30 and the dimension Wc2 of thethird channel layer 32 may be the same or different, the conduction typeof the third channel 32 may be the same as or different from theconduction type of the channel layer 30.

As shown in FIG. 35, the gate structure including gate electrode 40 andgate dielectric layer 80 is formed similar to FIG. 29, thereby forming athree-channel MOS Fin FET.

FIGS. 36-39 show exemplary processes for manufacturing the Fin FETdevice according to another embodiment of the present disclosure.

In the process shown in FIG. 23, the SiN layer 115 is removed from thetop surface of the fin structure 20. The SiN layer 115 may slightly beremained. Then, the process shown in FIG. 24 is performed to reduce theheight of the isolation layer 140. After these processes, a cap layer 74is formed over the fin structure 20 and interlayer insulating layer 140,as shown in FIG. 36.

In the alternative, as shown in FIG. 38, after the process shown in FIG.19, the hard mask patterns formed by the oxide layer 105 and the nitridelayer 110 and top portions of the isolation insulating layers 140 areremoved by, for example, a chemical mechanical polishing (CMP) method orother planarization methods such as an etch-back process. The topportions of the fin structure 20 may be slightly etched.

As shown in FIG. 39, the thickness of the isolation insulating layer 140is reduced by, for example, an etch-back process so as to expose a partof the fin structure 20. The etch-back process may be performed by usingdry etching or wet etching. By adjusting etching time, a desiredthickness of the remaining insulating layer 140 can be obtained. In thepresent disclosure, the thickness T3 is adjusted to be in a range ofabout 15 nm to about 270 nm in some embodiments. In this process, thesilicon oxide layer 60 at the tope portion of the fin structure 20 isalso removed. After the process shown in FIG. 39, a cap layer 74 isformed over the fin structure 20 and interlayer insulating layer 140, asshown in FIG. 36.

By using an etching process such as a plasma dry etching, side walls 76are formed so that the upper surface 27 of the fin structure 20 isexposed, as shown in FIG. 37. Then, the channel layer 30 and thirdchannel layer 32 are formed similar to FIG. 34, and the gate structureis further formed similar to FIG. 35, thereby forming a three-channelMOS Fin FET.

The various embodiments or examples described herein offer severaladvantages over the existing art. For example, in the presentdisclosure, since two channel layers including a Ge layer are disposedper one fin structure, the number of channels is double compared with acase where one channel is formed on one fin structure, and therefore ahigh density of high speed transistor using a Ge channel can beobtained.

It will be understood that not all advantages have been necessarilydiscussed herein, no particular advantage is required for allembodiments or examples, and other embodiments or examples may offerdifferent advantages.

In accordance with one aspect of the present disclosure, a semiconductordevice includes a fin structure for a fin field effect transistor (FET).The semiconductor device includes a fin structure protruding from asubstrate and having a top face and a first side face and a second sideface opposite to the first side face, and first semiconductor layersdisposed over the first and second side faces of the fin structure. Thethickness in a vertical direction of the first semiconductor layers issmaller than a height of the fin structure.

In accordance with another aspect of the present disclosure, asemiconductor device includes a fin structure for a fin field effecttransistor (FET). The semiconductor device includes a fin structureprotruding from a substrate and having a top face and a first side faceand a second side face opposite to the first side face, firstsemiconductor layers disposed over the first and second side faces ofthe fin structure, and a second semiconductor layer disposed over thetop face of the fin structure.

In accordance with another aspect of the present disclosure, a methodfor manufacturing a semiconductor device includes the followingoperations. A fin structure having a top face and a first side face anda second side face opposite to the first side face is formed. A lowercover layer is formed over the first and second side faces. An uppercover layer is formed over the first and second side faces. The uppercover layer is spaced apart from the lower cover layer so that exposedregions of the first and second side faces are formed between the lowercover layer and the upper cover layer. First semiconductor layers areformed over the exposed regions of the first and second side faces,respectively.

The foregoing outlines features of several embodiments or examples sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodiments orexamples introduced herein. Those skilled in the art should also realizethat such equivalent constructions do not depart from the spirit andscope of the present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a finstructure protruding from a substrate in a vertical direction and havinga top face and a first side face and a second side face opposite to thefirst side face; first semiconductor layers disposed over the first andsecond side faces of the fin structure; a gate electrode covering thetop fade and the first and second side faces of the fin structure andcovering the first semiconductor layers; and an insulating layerinterposed between the gate electrode and the fin structure and betweenthe gate electrode and the first semiconductor layers, wherein athickness in the vertical direction of the first semiconductor layers issmaller than a height of the fin structure.
 2. The semiconductor deviceof claim 1, wherein the first semiconductor layers include a Gecontaining layer.
 3. The semiconductor device of claim 1, wherein thefirst semiconductor layers include a Si layer and a Ge layer disposedover the Si layer.
 4. The semiconductor device of claim 1, wherein thefirst semiconductor layers include a Si layer, a Si_((1-x))Ge_(x) layerdisposed over the Si layer and a Ge layer disposed over theSi_((1-x))Ge_(x) layer, where 0.15≦x<1.
 5. The semiconductor device ofclaim 4, wherein an interface between the Si layer and theSi_((1-x))Ge_(x) layer is curved.
 6. The semiconductor device of claim1, wherein corners of the first semiconductor layers have a roundedshape.
 7. The semiconductor device of claim 1, further comprising alower cover layer disposed over a lower part of the first and secondside faces of the fin structure, the lower part being between thesubstrate and the first semiconductor layers.
 8. The semiconductordevice of claim 1, further comprising an upper cover layer covering anupper part of the first and second side faces of the fin structure andcovering the top face of the fin structure, wherein: the upper coverlayer is interposed between the insulating layer and the fin structure,and the upper cover layer is completely disposed at a level above thefirst semiconductor layers with reference to the substrate.
 9. Thesemiconductor device of claim 1, further comprising: a lower cover layercovering a lower part of the first and second side faces of the finstructure, wherein the lower cover layer is completely disposed at alevel below the first semiconductor layers with reference to thesubstrate.
 10. A semiconductor device, comprising: plural finstructures, each of which protrudes from a substrate in a verticaldirection and has a top face and a first side face and a second sideface opposite to the first side face, wherein: each of the finstructures includes first semiconductor layers disposed over the firstand second side faces of the each of the fin structures, thesemiconductor device further comprises: a gate electrode covering thetop face and the first and second side faces, and the firstsemiconductor layers of the plural tin structures; and a plurality ofgate insulating layers each interposed between the gate electrode and arespective one of the fin structures and between the gate electrode andthe first semiconductor layers of the respective one of the finstructures, and a thickness in the vertical direction of the firstsemiconductor layers of the respective one of the fin structures issmaller than a height of the respective one of the fin structures. 11.The semiconductor device of claim 10, wherein the first semiconductorlayers include a Ge containing layer.
 12. The semiconductor device ofclaim 10, wherein the first semiconductor layers include a Si layer anda Ge layer disposed over the Si layer.
 13. The semiconductor device ofclaim 10, wherein the first semiconductor layers include a Si layer, aSi_((1-x))Ge_(x) layer disposed over the Si layer and a Ge layerdisposed over the Si_((1-x))Ge_(x) layer, where 0.15≦x<1.
 14. Thesemiconductor device of claim 13, wherein an interface between the Silayer and the Si_((1-x))Ge_(x) layer is curved.
 15. The semiconductordevice of claim 10, wherein: each of the fin structures furthercomprises a lower cover layer disposed over a lower part of the firstand second side faces of the each of the fin structures, and the lowerpart is disposed between the substrate and the first semiconductorlayers.
 16. The semiconductor device of claim 15, wherein the lowercover includes two layers made of different insulating materials. 17.The semiconductor device of claim 10, wherein: each of the finstructures further comprises an upper cover layer covering an upper partof the first and second side faces of the each of the fin structures,the upper part is disposed above the first semiconductor layers withreference to the substrate, and the upper cover layer covers the topface of the each of the fin structures.
 18. A semiconductor device,comprising: a fin structure protruding from a substrate in a verticaldirection and having a top face and a first side face and a second sideface opposite to the first side face, wherein: at least one of the firstside face and the second side face includes a horizontally-protrudingchannel region made of a semiconductor material different from the finstructure, the horizontally-protruding channel region and the finstructure are respectively in direct contact with first and secondinsulating layers, which are made of different materials and covered bya gate electrode.
 19. The semiconductor device of claim 18, wherein: thefirst insulating layer extends between the second insulating layer andthe gate electrode.
 20. The semiconductor device of claim 1, wherein thefirst semiconductor layers are channels of a transistor.